EXPERIMENTAL-EVIDENCE FOR ONE HIGHLY DISPERSIVE DANGLING-BOND BAND ON SI(111) 2X1

被引：174

作者：

UHRBERG, RIG

HANSSON, GV

NICHOLLS, JM

FLODSTROM, SA

机构：

来源：

PHYSICAL REVIEW LETTERS | 1982年 / 48卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.48.1032

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1032 / 1035

页数：4

共 14 条

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[J]. SURFACE SCIENCE, 1980, 99 (01) : 13 - 27
[4] SURFACE-STATES ON SI(111)-(2X1)
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[J]. PHYSICAL REVIEW B, 1981, 24 (04): : 2003 - 2008
[5] ELECTRONIC STATES OF SI(111) SURFACES
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[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (26) : 1910 - 1913
[7] NEW PI-BONDED CHAIN MODEL FOR SI(111)-(2BY1) SURFACE
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[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (26) : 1913 - 1917
[8] ENERGY-BANDS OF RECONSTRUCTED SURFACE STATES OF CLEAVED SI
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[9] SURFACE-STATES AND THE SURFACE-STRUCTURE OF CLEAVED SILICON
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (24): : L993 - L996
[10] THE ELECTRONIC-STRUCTURE OF CLEAVED SILICON(111) SURFACES FOLLOWING ADSORPTION OF ALUMINUM
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (14): : L369 - L374

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