SURFACE-STATES ON SI(111)-(2X1)

被引：179

作者：

HIMPSEL, FJ

HEIMANN, P

EASTMAN, DE

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.24.2003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2003 / 2008

页数：6

共 27 条

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[4] ELECTRONIC STATES AND ELECTRON-PHONON COUPLING AT THE 2X1 RECONSTRUCTED SI(111) SURFACE
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[5] ATOMIC AND ELECTRONIC-STRUCTURE OF THE 7X7 RECONSTRUCTED SI(111) SURFACE
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[6] ORIGINS OF (111) SURFACE RECONSTRUCTIONS OF SI AND GE
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[7] CHADI DJ, J VAC SCI TECHNOL
[8] NEW INTERPRETATION OF ANGULAR-RESOLVED PHOTOEMISSION MEASUREMENTS FROM CLEAVED SILICON
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[9] EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492
[10] AN ELLIPSOIDAL MIRROR DISPLAY ANALYZER SYSTEM FOR ELECTRON-ENERGY AND ANGULAR MEASUREMENTS
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[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 172 (1-2): : 327 - 336

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