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ORIGINS OF (111) SURFACE RECONSTRUCTIONS OF SI AND GE
被引:13
作者
:
CHADI, DJ
论文数:
0
引用数:
0
h-index:
0
CHADI, DJ
机构
:
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY
|
1980年
/ 17卷
/ 05期
关键词
:
D O I
:
10.1116/1.570654
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:989 / 992
页数:4
相关论文
共 15 条
[1]
ATOMIC AND ELECTRONIC-STRUCTURE OF THE 7X7 RECONSTRUCTED SI(111) SURFACE
CHADI, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
CHADI, DJ
BAUER, RS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
BAUER, RS
WILLIAMS, RH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
WILLIAMS, RH
HANSSON, GV
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
HANSSON, GV
BACHRACH, RZ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
BACHRACH, RZ
MIKKELSEN, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
MIKKELSEN, JC
HOUZAY, F
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
HOUZAY, F
GUICHAR, GM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
GUICHAR, GM
PINCHAUX, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
PINCHAUX, R
PETROFF, Y
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
PETROFF, Y
[J].
PHYSICAL REVIEW LETTERS,
1980,
44
(12)
: 799
-
802
[2]
CHADI DJ, UNPUBLISHED
[3]
ELECTRONIC SURFACE-STATES ON RELAXED (111) SURFACE OF GE
CHELIKOWSKY, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHELIKOWSKY, JR
[J].
PHYSICAL REVIEW B,
1977,
15
(06):
: 3236
-
3242
[4]
POSSIBILITY OF INVOKING JAHN-TELLER EFFECT IN INTERPRETING PERMANENT DEFORMATION DETECTED BY DIFFRACTION OF LIGHT ELECTRONS ON DENSE SILICON AND GERMANIUM FACES
DUCROS, P
论文数:
0
引用数:
0
h-index:
0
DUCROS, P
[J].
SURFACE SCIENCE,
1968,
10
(02)
: 295
-
&
[5]
HANSSON GV, UNPUBLISHED
[6]
OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION
JONA, F
论文数:
0
引用数:
0
h-index:
0
JONA, F
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1965,
9
(5-6)
: 375
-
&
[7]
STRUCTURES OF CLEAN SURFACES OF GERMANIUM AND SILICON .1.
LANDER, JJ
论文数:
0
引用数:
0
h-index:
0
LANDER, JJ
MORRISON, J
论文数:
0
引用数:
0
h-index:
0
MORRISON, J
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(05)
: 1403
-
&
[8]
LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES
LANDER, JJ
论文数:
0
引用数:
0
h-index:
0
LANDER, JJ
MORRISON, J
论文数:
0
引用数:
0
h-index:
0
MORRISON, J
[J].
JOURNAL OF CHEMICAL PHYSICS,
1962,
37
(04)
: 729
-
&
[9]
STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES
LANDER, JJ
论文数:
0
引用数:
0
h-index:
0
LANDER, JJ
GOBELL, GW
论文数:
0
引用数:
0
h-index:
0
GOBELL, GW
MORRISON, J
论文数:
0
引用数:
0
h-index:
0
MORRISON, J
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(08)
: 2298
-
+
[10]
LANDER JJ, 1965, SOLID STATE CHEM, V2, P26
←
1
2
→
共 15 条
[1]
ATOMIC AND ELECTRONIC-STRUCTURE OF THE 7X7 RECONSTRUCTED SI(111) SURFACE
CHADI, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
CHADI, DJ
BAUER, RS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
BAUER, RS
WILLIAMS, RH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
WILLIAMS, RH
HANSSON, GV
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
HANSSON, GV
BACHRACH, RZ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
BACHRACH, RZ
MIKKELSEN, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
MIKKELSEN, JC
HOUZAY, F
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
HOUZAY, F
GUICHAR, GM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
GUICHAR, GM
PINCHAUX, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
PINCHAUX, R
PETROFF, Y
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE
PETROFF, Y
[J].
PHYSICAL REVIEW LETTERS,
1980,
44
(12)
: 799
-
802
[2]
CHADI DJ, UNPUBLISHED
[3]
ELECTRONIC SURFACE-STATES ON RELAXED (111) SURFACE OF GE
CHELIKOWSKY, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHELIKOWSKY, JR
[J].
PHYSICAL REVIEW B,
1977,
15
(06):
: 3236
-
3242
[4]
POSSIBILITY OF INVOKING JAHN-TELLER EFFECT IN INTERPRETING PERMANENT DEFORMATION DETECTED BY DIFFRACTION OF LIGHT ELECTRONS ON DENSE SILICON AND GERMANIUM FACES
DUCROS, P
论文数:
0
引用数:
0
h-index:
0
DUCROS, P
[J].
SURFACE SCIENCE,
1968,
10
(02)
: 295
-
&
[5]
HANSSON GV, UNPUBLISHED
[6]
OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION
JONA, F
论文数:
0
引用数:
0
h-index:
0
JONA, F
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1965,
9
(5-6)
: 375
-
&
[7]
STRUCTURES OF CLEAN SURFACES OF GERMANIUM AND SILICON .1.
LANDER, JJ
论文数:
0
引用数:
0
h-index:
0
LANDER, JJ
MORRISON, J
论文数:
0
引用数:
0
h-index:
0
MORRISON, J
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(05)
: 1403
-
&
[8]
LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES
LANDER, JJ
论文数:
0
引用数:
0
h-index:
0
LANDER, JJ
MORRISON, J
论文数:
0
引用数:
0
h-index:
0
MORRISON, J
[J].
JOURNAL OF CHEMICAL PHYSICS,
1962,
37
(04)
: 729
-
&
[9]
STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES
LANDER, JJ
论文数:
0
引用数:
0
h-index:
0
LANDER, JJ
GOBELL, GW
论文数:
0
引用数:
0
h-index:
0
GOBELL, GW
MORRISON, J
论文数:
0
引用数:
0
h-index:
0
MORRISON, J
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(08)
: 2298
-
+
[10]
LANDER JJ, 1965, SOLID STATE CHEM, V2, P26
←
1
2
→