THE RELATION BETWEEN EBIC CONTRAST AND RECOMBINATION VELOCITY OF A GRAIN-BOUNDARY

被引：18

作者：

DONOLATO, C

机构：

[1] CNR-Istituto di Chimica e Tecnologia dei Materiali e dei Componenti per l'Elettronica (LAMEL), I-40129 Bologna

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 24卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(94)90298-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electron-beam-induced current (EBIC) contrast of a grain boundary is calculated using the approximation of a spherically symmetrical Gaussian generation. The resulting analytical expression (in terms of a single integral) yields curves that relate the contrast of this defect to its recombination velocity, for a given minority carrier diffusion length and electron beam energy. The value c(M) = 64% is obtained for the theoretical upper limit to the EBIC contrast of a grain boundary in silicon.

引用

页码：61 / 63

页数：3

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