HEAVILY DOPED POLYSILICON-CONTACT SOLAR-CELLS

被引：52

作者：

LINDHOLM, FA

NEUGROSCHEL, A

ARIENZO, M

ILES, PA

机构：

[1] APPL SOLAR ENERGY CORP,CITY OF INDUSTRY,CA 91749

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 07期

关键词：

D O I：

10.1109/EDL.1985.26155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：363 / 365

页数：3

共 11 条

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[7] EFFECT OF EMITTER CONTACT ON CURRENT GAIN OF SILICON BIPOLAR-DEVICES [J].

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[8]

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[10]

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