MUONIUM CENTERS IN CRYSTALLINE SI AND GE UNDER ILLUMINATION

被引：39

作者：

KADONO, R ^{[1
]}

MATSUSHITA, A ^{[1
]}

MACRAE, RM ^{[1
]}

NISHIYAMA, K ^{[1
]}

NAGAMINE, K ^{[1
]}

机构：

[1] UNIV TOKYO,FAC SCI,MESON SCI LAB,TOKYO 113,JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 73卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.73.2724

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The charged state of implanted positive muons, Mu±, formed at high temperatures undergoes fast spin relaxation in both Si and Ge under illumination due to a cyclic charge-exchange reaction with photoinduced carriers. In Si, the neutral tetrahedral interstitial muonium state (MuT0) also collides effectively with carriers to induce reaction, while in Ge the neutral state is unreactive. In particular, in Si at low temperatures, the MuBC0 center is rapidly converted into bond center muonium (MuT0) with supervening fast spin relaxation under illumination. © 1994 The American Physical Society.

引用

页码：2724 / 2727

页数：4

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