MAGNETOEXCITONS IN A NARROW SINGLE GAAS-GA0.5AL0.5AS QUANTUM WELL GROWN BY MOLECULAR-BEAM EPITAXY

被引:18
作者
LEFEBVRE, P
GIL, B
LASCARAY, JP
MATHIEU, H
BIMBERG, D
FUKUNAGA, T
NAKASHIMA, H
机构
[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,D-1000 BERLIN 12,FED REP GER
[2] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
来源
PHYSICAL REVIEW B | 1988年 / 37卷 / 08期
关键词
D O I
10.1103/PhysRevB.37.4171
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4171 / 4174
页数:4
相关论文
共 30 条
  • [1] CORRECTION
    ALTARELL.M
    [J]. PHYSICAL REVIEW B, 1973, 8 (08): : 4046 - 4046
  • [2] PERTURBATION-THEORY INVESTIGATION OF EXCITON GROUND-STATE OF CUBIC SEMICONDUCTORS IN A MAGNETIC-FIELD
    ALTARELLI, M
    LIPARI, NO
    [J]. PHYSICAL REVIEW B, 1973, 7 (08) : 3798 - 3802
  • [3] BASTARD G, 1981, PHYS REV B, V24, P474
  • [4] Bauer R., 1987, 18th International Conference on the Physics of Semiconductors, P525
  • [5] CATHODOLUMINESCENCE ATOMIC SCALE IMAGES OF MONOLAYER ISLANDS AT GAAS/GAALAS INTERFACES
    BIMBERG, D
    CHRISTEN, J
    FUKUNAGA, T
    NAKASHIMA, H
    MARS, DE
    MILLER, JN
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1191 - 1197
  • [6] STRUCTURAL-CHANGES OF THE INTERFACE, ENHANCED INTERFACE INCORPORATION OF ACCEPTORS, AND LUMINESCENCE EFFICIENCY DEGRADATION IN GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY UPON GROWTH INTERRUPTION
    BIMBERG, D
    MARS, D
    MILLER, JN
    BAUER, R
    OERTEL, D
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1014 - 1021
  • [7] FREE EXCITONS IN INP IN HIGH MAGNETIC-FIELDS
    BIMBERG, D
    HESS, K
    LIPARI, NO
    FISCHBACH, JU
    ALTARELLI, M
    [J]. PHYSICA B & C, 1977, 89 (APR): : 139 - 142
  • [8] BIMBERG D, 1977, ADV SOLID STATE PHYS, V17, P195
  • [9] DIAMAGNETIC SHIFT OF EXCITON ENERGY-LEVELS IN GAAS-GA1-XALXAS QUANTUM-WELLS
    BUGAJSKI, M
    KUSZKO, W
    REGINSKI, K
    [J]. SOLID STATE COMMUNICATIONS, 1986, 60 (08) : 669 - 673
  • [10] CHEN Y, 1987, IN PRESS P M EXCITON