LATTICE-CONSTANT-ADAPTABLE CRYSTALLOGRAPHICS .3. HETEROEPITAXIAL PHENOMENA OF SEMICONDUCTORS ON GARNETS - AN EXPERIMENTAL-VERIFICATION

被引：6

作者：

HAISMA, J ^{[1
]}

DAAMS, JLC ^{[1
]}

DEJONG, AF ^{[1
]}

KOEK, BH ^{[1
]}

MAES, JWF ^{[1
]}

MATEIKA, D ^{[1
]}

PISTORIUS, JA ^{[1
]}

ROKSNOER, PJ ^{[1
]}

机构：

[1] PHILIPS GMBH,W-2000 HAMBURG 54,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 102卷 / 04期

关键词：

D O I：

10.1016/0022-0248(90)90871-H

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Heteroepitaxial growth on small areas of a few square microns of GaAs and InP on lattice-constant-adapted garnets is studied. Lattice-matching theory and results deduced from transmission-electron-microscopic (TEM) lattice images are compared. It is shown that for the heteroepitaxial examples realized by organometallic chemical vapour deposition (OMCVD), the cross-sectional lattice-matching relations, expressed in interplanar distances, do not deviate more than 0.1% from theory. Generally, accurate measurements of interplanar distances (observed on TEM photographs) are in agreement with theory within experimental error. Curiously enough, in two cases marked exceptions from theoretical expectations are found (in TEM images) where the rest is in agreement with theory. Phenomenological details of this novel phenomenon will be presented as well as a model which incorporates all deviations found on the TEM lattice images. We have coined for this material composition the term "superstructure of shifted sublattices" (SSS). © 1990.

引用

页码：1014 / 1034

页数：21

共 28 条

[1]

[Anonymous], 1982, LASER ANNEALING SEMI

[2]

BEAM JC, 1980, APPL PHYS LETT, V36, P741

[3]

BEAM JC, 1985, SILICON MOL BEAM EPI

[4]

Bouwhuis G., 1985, PRINCIPLES OPTICAL D