SOME PROPERTIES OF SB2TE3-XSEX FOR NONVOLATILE MEMORY BASED ON PHASE-TRANSITION

被引：128

作者：

GOSAIN, DP ^{[1
]}

SHIMIZU, T ^{[1
]}

OHMURA, M ^{[1
]}

SUZUKI, M ^{[1
]}

BANDO, T ^{[1
]}

OKANO, S ^{[1
]}

机构：

[1] ISHIKAWA COLL TECHNOL,TSUBATA 92903,JAPAN

来源：

JOURNAL OF MATERIALS SCIENCE | 1991年 / 26卷 / 12期

关键词：

D O I：

10.1007/BF01124673

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Composition dependence of properties of Sb2Te(3-x)Se(x) in the range O less-than-or-equal-to x < 3 were studied using differential thermal analysis and X-ray diffraction. Sb2Te(3-x)Se(x) form solid solution for 0 < x less-than-or-equal-to 1.25 and 2.75 less-than-or-equal-to x < 3. A systematic study of crystallization temperature in Sb2Te(3-x)Se(x) (0 less-than-or-equal-to x less-than-or-equal-to 2.75) thin films prepared by flash evaporation was carried out. In preliminary experiments for some compositions, more than 10(3) repetitions between amorphous and crystalline states were attained by the application of electric pulses.

引用

页码：3271 / 3274

页数：4

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