SIMULATION STUDY OF PEAK JUNCTION TEMPERATURE AND POWER LIMITATION OF ALGAAS/GAAS HBTS UNDER PULSED AND CW OPERATION

被引：5

作者：

GUI, X ^{[1
]}

GAO, GB ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.192775

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have used a three-dimensional transmission-line matrix (3D TLM) modeling method to study the junction temperature distribution and power limitation of device geometries with multiple embedded heat sources. Peak values of the junction temperature against the dissipated power density under both pulsed and CW operation are presented for a typical power AlGaAs / GaAs HBT structure. These data should facilitate the rapid determination of junction temperature for a given output power, which is of paramount importance in power device design.

引用

页码：411 / 413

页数：3

共 7 条

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