GIANT GROWTH AXIS LONGITUDINAL MAGNETORESISTANCE FROM INPLANE CONDUCTION IN SEMICONDUCTOR SUPERLATTICES

被引：8

作者：

LEE, M ^{[1
]}

WINGREEN, NS ^{[1
]}

SOLIN, SA ^{[1
]}

WOLFF, PA ^{[1
]}

机构：

[1] NEC RES INST INC,PRINCETON,NJ 08540

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 89卷 / 08期

关键词：

D O I：

10.1016/0038-1098(94)90577-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electron hopping conduction along the growth-axis of a set of GaAs/Ga0.7Al0.3As superlattices reveals a giant longitudinal magnetoresistance (LMR) which increases as H-2 up to 9 T, where R(H)/R(0) approximately 4 in samples with the largest hybridization energy, delta, between wells. The LMR increases with delta and is essentially temperature-independent. Concomitant magnetic effects are observed in the electric-field-induced localization of the I-V characteristics. We show quantitatively that these features result from a new superlattice conduction mechanism which incorporates both in-plane and growth-axis contributions.

引用

页码：687 / 691

页数：5

共 21 条

[1]

BHATT R, 1990, PHYS REV LETT, V65, P2050

[2] HOPPING CONDUCTION IN MULTIQUANTUM WELL STRUCTURES [J].