BAND-STRUCTURE AND DISORDER EFFECTS ON ELECTRON LOCALIZATION IN SEMICONDUCTOR SUPERLATTICES

被引：6

作者：

LEE, M

SOLIN, SA

机构：

[1] NEC Research Institute Inc., Princeton, NJ 08540

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 83卷 / 09期

关键词：

D O I：

10.1016/0038-1098(92)90143-W

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Superlattices of GaAs/Ga0.7Al0.3As have been employed to investigate the effects of band structure, disorder, and barrier transmission on electron localization. Vertical transport experiments yield evidence of both electric field-induced localization via Wannier-Stark ladder formation and disorder-induced localization due to coherent backscattering from random fluctuations in the barrier transmission amplitude. Samples with narrower mini-band widths show greater localization effects from both mechanisms.

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页码：673 / 677

页数：5

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