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ELECTRICAL CHARACTERIZATION OF AMORPHOUS-GERMANIUM DIOXIDE FILMS
被引:10
作者
:
KRUPANIDHI, SB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DELHI, DEPT PHYS & ASTROPHYS, DELHI 110007, INDIA
UNIV DELHI, DEPT PHYS & ASTROPHYS, DELHI 110007, INDIA
KRUPANIDHI, SB
[
1
]
SAYER, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DELHI, DEPT PHYS & ASTROPHYS, DELHI 110007, INDIA
UNIV DELHI, DEPT PHYS & ASTROPHYS, DELHI 110007, INDIA
SAYER, M
[
1
]
MANSINGH, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DELHI, DEPT PHYS & ASTROPHYS, DELHI 110007, INDIA
UNIV DELHI, DEPT PHYS & ASTROPHYS, DELHI 110007, INDIA
MANSINGH, A
[
1
]
机构
:
[1]
UNIV DELHI, DEPT PHYS & ASTROPHYS, DELHI 110007, INDIA
来源
:
THIN SOLID FILMS
|
1984年
/ 113卷
/ 03期
关键词
:
D O I
:
10.1016/0040-6090(84)90219-0
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:173 / 184
页数:12
相关论文
共 23 条
[21]
SZE SM, 1969, PHYSICS SEMICONDUCTO
[22]
AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES
[J].
TERMAN, LM
论文数:
0
引用数:
0
h-index:
0
TERMAN, LM
.
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
:285
-299
[23]
CURRENT-VOLTAGE CHARACTERISTICS AND CAPACITANCE OF ISOTYPE HETEROJUNCTIONS
[J].
VANOPDORP, C
论文数:
0
引用数:
0
h-index:
0
VANOPDORP, C
;
KANERVA, HKJ
论文数:
0
引用数:
0
h-index:
0
KANERVA, HKJ
.
SOLID-STATE ELECTRONICS,
1967,
10
(05)
:401
-+
←
1
2
3
→
共 23 条
[21]
SZE SM, 1969, PHYSICS SEMICONDUCTO
[22]
AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES
[J].
TERMAN, LM
论文数:
0
引用数:
0
h-index:
0
TERMAN, LM
.
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
:285
-299
[23]
CURRENT-VOLTAGE CHARACTERISTICS AND CAPACITANCE OF ISOTYPE HETEROJUNCTIONS
[J].
VANOPDORP, C
论文数:
0
引用数:
0
h-index:
0
VANOPDORP, C
;
KANERVA, HKJ
论文数:
0
引用数:
0
h-index:
0
KANERVA, HKJ
.
SOLID-STATE ELECTRONICS,
1967,
10
(05)
:401
-+
←
1
2
3
→