MODELING JOSEPHSON JUNCTIONS

被引：65

作者：

MCDONALD, DG ^{[1
]}

JOHNSON, EG ^{[1
]}

HARRIS, RE ^{[1
]}

机构：

[1] NBS,BOULDER,CO 80302

来源：

PHYSICAL REVIEW B | 1976年 / 13卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.13.1028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1028 / 1031

页数：4

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[2] 1.4 MIL2 MEMORY CELL WITH JOSEPHSON JUNCTIONS
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[7] SINGLE-CRYSTAL SILICON-BARRIER JOSEPHSON JUNCTIONS
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[J]. IEEE TRANSACTIONS ON MAGNETICS, 1975, MA11 (02) : 766 - 769
[8] JOSEPHSON TUNNELING THROUGH LOCALLY THINNED SILICON WAFERS
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[10] VORTEX STRUCTURE AND CRITICAL CURRENTS IN JOSEPHSON JUNCTIONS
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[J]. PHYSICAL REVIEW, 1967, 164 (02): : 538 - +