PRECISE PROFILES FOR ARSENIC IMPLANTED IN SI AND SIO2 OVER A WIDE IMPLANTATION ENERGY-RANGE (10 KEV-2.56 MEV)

被引：25

作者：

NAKATA, J

KAJIYAMA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 09期

关键词：

D O I：

10.1143/JJAP.21.1363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1363 / 1369

页数：7

共 17 条

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[5]

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[9]

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[10]

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