DESCRIPTION OF ARSENIC AND BORON PROFILES IMPLANTED IN SIO2,SI3N4 AND SI USING PEARSON DISTRIBUTIONS WITH 4 MOMENTS

被引：44

作者：

JAHNEL, F

RYSSEL, H

PRINKE, G

HOFFMANN, K

MULLER, K

BIERSACK, J

HENKELMANN, R

机构：

[1] INST FESTKORPERTECHNOL,D-8000 MUCHEN 60,FED REP GER

[2] SIEMENS AG,D-8000 MUNCHEN 90,FED REP GER

[3] HAHN MEITNER INST KERNFORSCH BERLIN GMBH,D-1000 BERLIN 39,FED REP GER

来源：

NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期

关键词：

D O I：

10.1016/0029-554X(81)90691-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：223 / 229

页数：7

共 12 条

[1] BIERSACK JP, UNPUBLISHED
[2] GIBBONS JF, 1975, PROJECTED RANGE STAT
[3] HOFKER WK, 1975, PHILIPS RES REPORTS
[4] MULLER K, 1975, NUCL INSTR METH, V129
[5] REDDI VGK, 1972, SOLID STATE TECHNOL, V15, P35
[6] Ryssel H., 1978, ION IMPLANTATION
[7] RYSSEL H, 1980, IEEE T EL DEV AUG
[8] RYSSEL H, UNPUBLISHED
[9] SMITH B, 1977, ION IMPLANTATIONS RA
[10] TECHNIQUE FOR DETERMINING CONCENTRATION PROFILES OF BORON IMPURITIES IN SUBSTRATES
ZIEGLER, JF
BAGLIN, JEE
COLE, GW
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3809 - &