IMPURITY-INDUCED DISORDERING OF SINGLE WELL AIXGA1-XAS-GAAS QUANTUM WELL HETEROSTRUCTURES

[1] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 228 - 230

[2] WAVELENGTH MODIFICATION OF ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURE LASERS BY LAYER INTERDIFFUSION [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5637 - 5641

[3] IMPURITY INDUCED DISORDERING OF STRAINED GAP-GAAS1-XPX(X-APPROXIMATELY-0.6) SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (02) : 185 - 187

[4] PHOTOPUMPED LOW THRESHOLD ALX'GA1-X'AS-ALX'GA1-X'AS-ALXGA1-XAS(X'-APPROXIMATELY-0.85,X'-APPROXIMATELY-0.3,X=0) SINGLE QUANTUM WELL LASERS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (09) : 761 - 763

[5] CAMRAS MD, 1983, I PHYSICS C SERIES, V65, P233

[6] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 904 - 906

[7] DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1

[8] IR-RED GAAS-ALAS SUPER-LATTICE LASER MONOLITHICALLY INTEGRATED IN A YELLOW-GAP CAVITY [J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 102 - 104

[9] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[10] INDUCED DISORDER OF ALAS-ALGAAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) : 1 - 20

[1] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 228 - 230

[2] WAVELENGTH MODIFICATION OF ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURE LASERS BY LAYER INTERDIFFUSION [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5637 - 5641

[3] IMPURITY INDUCED DISORDERING OF STRAINED GAP-GAAS1-XPX(X-APPROXIMATELY-0.6) SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (02) : 185 - 187

[4] PHOTOPUMPED LOW THRESHOLD ALX'GA1-X'AS-ALX'GA1-X'AS-ALXGA1-XAS(X'-APPROXIMATELY-0.85,X'-APPROXIMATELY-0.3,X=0) SINGLE QUANTUM WELL LASERS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (09) : 761 - 763

[5] CAMRAS MD, 1983, I PHYSICS C SERIES, V65, P233

[6] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 904 - 906

[7] DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1

[8] IR-RED GAAS-ALAS SUPER-LATTICE LASER MONOLITHICALLY INTEGRATED IN A YELLOW-GAP CAVITY [J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 102 - 104

[9] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[10] INDUCED DISORDER OF ALAS-ALGAAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) : 1 - 20