A 1.3 MU-M INGAASP/INP MULTIQUANTUM WELL LASER GROWN BY LPE

被引：12

作者：

SASAI, Y

HASE, N

KAJIWARA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 02期

关键词：

D O I：

10.1143/JJAP.24.L137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L137 / L139

页数：3

共 13 条

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[2]

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[3] QUANTUM WELL STRUCTURES OF IN0.53GA0.47AS/INP GROWN BY HYDRIDE VAPOR-PHASE EPITAXY IN A MULTIPLE CHAMBER REACTOR [J].

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[5] CALCULATION OF AUGER RATES IN A QUANTUM WELL STRUCTURE AND ITS APPLICATION TO INGAASP QUANTUM WELL LASERS [J].

DUTTA, NK .

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[6] 1.3 MU-M INGAASP DCPBH MULTIQUANTUM-WELL LASERS [J].

DUTTA, NK ;

NAPHOLTZ, SG ;

YEN, R ;

BROWN, RL ;

SHEN, TM ;

OLSSON, NA ;

CRAFT, DC .

ELECTRONICS LETTERS, 1984, 20 (18) :727-728

[7] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR A QUANTUM-WELL HETEROSTRUCTURE LASER [J].

HESS, K ;

VOJAK, BA ;

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CHIN, R .

SOLID-STATE ELECTRONICS, 1980, 23 (06) :585-589

[8] FABRICATION AND CHARACTERIZATION OF NARROW STRIPE INGAASP-INP BURIED HETEROSTRUCTURE LASERS [J].

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DOI, A ;

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AIKI, K .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4539-4540

[9]

KOMENO J, 1984, 16 INT C SOL STAT DE, P567

[10]

NAGAI H, 1978, APPL PHYS LETT, V34, P265

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