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EMPIRICAL FORMULAS FOR DESIGN AND OPTIMIZATION OF 1.55 MU-M INGAAS/INGAASP STRAINED-QUANTUM-WELL LASERS

被引：16
作者：
LIN, CH
LO, YH
机构：
[1] School of Electrical Engineering, Cornell Univerrsity, Ithaca
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 03期
关键词：
D O I：
10.1109/68.205614
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of strain and number of quantum wells on optical gain, differential gain, and nonlinear gain coefficient in 1.55 mum InGaAs/InGaAsP strained-quantum-well lasers are theoretically investigated first. Well approximated empirical expressions are then proposed to model these effects. Using these formulas, one can easily and accurately predict the performance of a laser diode for a given structure. Therefore, these empirical formulas are useful tools for design and optimization of strained quantum well lasers. As a general design guideline revealed from our empirical formulas, the threshold current is reduced with the compressive strain, and the modulation band-width is most efficiently increased with the number of wells.
引用
收藏
页码：288 / 290
页数：3
相关论文
共 8 条
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