MULTIQUANTUM WELL STRAINED-LAYER LASERS WITH IMPROVED LOW-FREQUENCY RESPONSE AND VERY LOW DAMPING

被引:21
作者
LESTER, LF [1 ]
OKEEFE, SS [1 ]
SCHAFF, WJ [1 ]
EASTMAN, LF [1 ]
机构
[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
关键词
SEMICONDUCTOR LASERS; LASERS;
D O I
10.1049/el:19920240
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Strained-layer In0.3Ga0.7As/GaAs multiquantum well lasers fabricated by chemically assisted ion beam etching have achieved a record 3dB modulation bandwidth of 28GHz. The low frequency rolloff and nonlinear gain coefficient have been improved substantially by employing a separate confinement heterostructure design that has a fast carrier capture time.
引用
收藏
页码:383 / 385
页数:3
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