EFFECTS OF RADIATION DAMAGE ON BEHAVIOR OF GAAS P-N JUNCTIONS

被引：25

作者：

AUKERMAN, LW

MILLEA, MF

MCCOLL, M

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1966年 / NS13卷 / 06期

关键词：

D O I：

10.1109/TNS.1996.4324359

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：174 / &

共 18 条

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[3]

AUKERMAN LW, TO BE PUBLISHED

[4] COHERENT LIGHT EMISSION FROM P-N JUNCTIONS [J].

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[5]

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[7]

KEYES RJ, 1962, P IRE, V50, P1822

[8] DETERMINATION OF THE ACTIVE REGION IN LIGHT-EMITTING GAAS DIODES [J].

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IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) :70-71

[9] 1.0- AND 1.28-EV EMISSION FROM GAAS DIODES [J].

MILLEA, MF ;

AUKERMAN, LW .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) :1788-&

[10] ROLE OF DIFFUSION CURRENT IN ELECTROLUMINESCENCE OF GAAS DIODES ( ELECTRON IRRADIATION EFFECTS 78 DEGREES-300 DEGREES K E/T ) [J].

MILLEA, MF ;

AUKERMAN, LW .

APPLIED PHYSICS LETTERS, 1964, 5 (08) :168-+

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