BAND-FILLING CURRENT IN HEAVILY DOPED GAAS DIODES

被引：12

作者：

AUKERMAN, LW

MILLEA, MF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 08期

关键词：

D O I：

10.1063/1.1714535

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2585 / &

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[1] ELECTRON-HOLE AND ELECTRON-IMPURITY BAND TUNNELING IN GAAS LUMINESCENT JUNCTIONS
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[2] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS
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[3] DEGENERATE GERMANIUM .1. TUNNEL, EXCESS, AND THERMAL CURRENT IN TUNNEL DIODES
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[J]. PHYSICAL REVIEW, 1962, 126 (04): : 1329 - &
[4] LIGHT EMISSION FROM REVERSE BIASED GAAS + INP P-N JUNCTIONS
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[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (12) : 3543 - &
[5] ROLE OF DIFFUSION CURRENT IN ELECTROLUMINESCENCE OF GAAS DIODES ( ELECTRON IRRADIATION EFFECTS 78 DEGREES-300 DEGREES K E/T )
MILLEA, MF
AUKERMAN, LW
[J]. APPLIED PHYSICS LETTERS, 1964, 5 (08) : 168 - +
[6] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE
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ASHKIN, A
[J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 182 - 184
[7] INFLUENCE OF DEGENERACY ON RECOMBINATION RADIATION IN GERMANIUM
PANKOVE, JI
[J]. PHYSICAL REVIEW LETTERS, 1960, 4 (01) : 20 - 21
[8] INTERNAL COMMUNICATI