LIGHT EMISSION FROM REVERSE BIASED GAAS + INP P-N JUNCTIONS

被引：32

作者：

MICHEL, AE

MARINACE, JC

NATHAN, MI

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1964年 / 35卷 / 12期

关键词：

D O I：

10.1063/1.1713267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3543 / &

共 31 条

[1] RECOMBINATION RADIATION IN GAAS [J].

BLACK, J ;

MAYBURG, S ;

LOCKWOOD, H .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) :178-&

[2] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN GERMANIUM PARA-NORMAL JUNCTIONS [J].

CHYNOWETH, AG ;

GUMMEL, HK .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) :191-&

[3] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J].

CHYNOWETH, AG ;

MCKAY, KG .

PHYSICAL REVIEW, 1956, 102 (02) :369-376

[4] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J].

CHYNOWETH, AG ;

MCKAY, KG .

PHYSICAL REVIEW, 1957, 106 (03) :418-426

[5]

CHYNOWETH AG, PRIVATE COMMUNICATIO

[6] RECOMBINATION RADIATION FROM SILICON UNDER STRONG-FIELD CONDITIONS [J].

DAVIES, LW ;

STORM, AR .

PHYSICAL REVIEW, 1961, 121 (02) :381-+

[7] ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J].

GERSHENZON, M ;

MIKULYAK, RM .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) :1338-&

[8] ELECTRICAL CONTACTS TO SILICON CARBIDE [J].

HALL, RN .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (06) :914-917

[9] INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE [J].

HILL, DE .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A) :A866-&

[10]

KELLY CE, 1963, P IEEE, V9, P1239

← 1 2 3 4 →