ELECTRON-MICROSCOPY STUDY OF THE AUGE/NI/AU CONTACTS ON GAAS AND GAALAS

被引：13

作者：

LILIENTAL, Z ^{[1
]}

CARPENTER, RW ^{[1
]}

ESCHER, J ^{[1
]}

机构：

[1] MOTOROLA INC,PHOENIX,AZ 85008

来源：

关键词：

D O I：

10.1016/0304-3991(84)90118-9

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：135 / 143

页数：9

共 14 条

[1] ALLOYED OHMIC CONTACTS TO GAAS
BRASLAU, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 803 - 807
[2] CASEY HC, 1978, HETEROSTRUCTURE LASE, P277
[3] SOLID-PHASE FORMATION IN AU-GE-NI, AG-IN-GE, IN-AU-GE GAAS OHMIC CONTACT SYSTEMS
CHRISTOU, A
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (02) : 141 - &
[4] Hayashi I., 1980, Journal of the Physical Society of Japan, V49, P57
[5] HOLLAN L, 1980, CURRENT TOPICS MATER, V5, P1
[6] KIM T, 1983 MAT RES SOC S P
[7] DISSOCIATION OF GAAS AND GA0.7AL0.3AS DURING ALLOYING OF GOLD CONTACT FILMS
KINSBRON, E
GALLAGHER, PK
ENGLISH, AT
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (05) : 517 - &
[8] ELECTRON-MICROSCOPE STUDIES OF AN ALLOYED AU/NI-AU-GE OHMIC CONTACT TO GAAS
KUAN, TS
BATSON, PE
JACKSON, TN
RUPPRECHT, H
WILKIE, EL
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6952 - 6957
[9] LILIENTAL Z, 1983, THIN SOLID FILMS, V104, P17, DOI 10.1016/0040-6090(83)90545-X
[10] ON THE POINT AND LINE DEFECTS WHICH ARE COMMON TO BOTH DEGRADED LIGHT-EMITTING-DIODES AND PLASTICALLY DEFORMED GAAS
LILIENTAL, Z
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 2097 - 2102