DISSOCIATION OF GAAS AND GA0.7AL0.3AS DURING ALLOYING OF GOLD CONTACT FILMS

被引：65

作者：

KINSBRON, E

GALLAGHER, PK

ENGLISH, AT

机构：

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 05期

关键词：

D O I：

10.1016/0038-1101(79)90158-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：517 / &

共 15 条

[1] EQUILIBRIUM DIAGRAM OF SYSTEM GOLD-GALLIUM [J].

COOKE, CJ ;

HUMEROTH.W .

JOURNAL OF THE LESS-COMMON METALS, 1966, 10 (01) :42-&

[2] EVOLVED GAS-ANALYSIS SYSTEM [J].

GALLAGHER, PK .

THERMOCHIMICA ACTA, 1978, 26 (1-3) :175-183

[3] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J].

GYULAI, J ;

MAYER, JW ;

RODRIGUEZ, V ;

YU, AYC ;

GOPEN, HJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3578-+

[4]

HERAKI A, 1977, APPL PHYS LETT, V31, P611

[5]

KERAMIDAS VG, 1978, 7TH INT S GAAS REL C

[6] OUTMIGRATION OF GALLIUM FROM AU-GAAS INTERFACES [J].

MADAMS, CJ ;

MORGAN, DV ;

HOWES, MJ .

ELECTRONICS LETTERS, 1975, 11 (24) :574-575

[7] ELECTRON-MICROSCOPY STUDIES OF ALLOYING BEHAVIOR OF AU ON GAAS [J].

MAGEE, TJ ;

PENG, J .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (02) :695-700

[8] ZERO-BIAS CONTACT RESISTANCES OF AU-GAAS SCHOTTKY BARRIERS [J].

MCCOLL, M ;

MILLEA, MF ;

MEAD, CA .

SOLID-STATE ELECTRONICS, 1971, 14 (08) :677-&

[9] TERNARY CONDENSED PHASE SYSTEMS OF GALLIUM AND ARSENIC WITH GROUP IB ELEMENTS [J].

PANISH, MB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (05) :516-&

[10] REVIEW OF THEORY AND TECHNOLOGY FOR OHMIC CONTACTS TO GROUP III-V COMPOUND SEMICONDUCTORS [J].

RIDEOUT, VL .

SOLID-STATE ELECTRONICS, 1975, 18 (06) :541-550

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