ZERO-BIAS CONTACT RESISTANCES OF AU-GAAS SCHOTTKY BARRIERS

[1] BETHE HA, 1942, MIT4312 RAD LAB REP

[2] BROOKS H, 1955, ADV ELECTRON, V7, P128

[3] TUNNELING SPECTROSCOPY IN GAAS [J]. PHYSICAL REVIEW, 1967, 161 (03): : 681 - +

[4] ELECTRON TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J]. PHYSICAL REVIEW, 1966, 150 (02): : 466 - &

[5] EXPERIMENTAL ASPECTS OF TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2880 - &

[6] DUKE CL, PRIVATE COMMUNICATIO

[7] FISTAL VI, 1969, HEAVILY DOPED SEMICO

[8] FRANZ W, 1956, HDB PHYSIK, V17, P155

[9] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4575 - &

[10] HENISCH HK, 1957, RECTIFYING SEMICONDU, P219

[1] BETHE HA, 1942, MIT4312 RAD LAB REP

[2] BROOKS H, 1955, ADV ELECTRON, V7, P128

[3] TUNNELING SPECTROSCOPY IN GAAS [J]. PHYSICAL REVIEW, 1967, 161 (03): : 681 - +

[4] ELECTRON TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J]. PHYSICAL REVIEW, 1966, 150 (02): : 466 - &

[5] EXPERIMENTAL ASPECTS OF TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2880 - &

[6] DUKE CL, PRIVATE COMMUNICATIO

[7] FISTAL VI, 1969, HEAVILY DOPED SEMICO

[8] FRANZ W, 1956, HDB PHYSIK, V17, P155

[9] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4575 - &

[10] HENISCH HK, 1957, RECTIFYING SEMICONDU, P219