MONOLAYER AND BILAYER GROWTH ON GE(111)

被引：2

作者：

AARTS, J

GERITS, WM

LARSEN, PK

机构：

[1] Philips Research Lab, Eindhoven, Neth, Philips Research Lab, Eindhoven, Neth

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

ELECTRONS; -; Diffraction;

D O I：

10.1016/0022-0248(87)90366-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Intensity oscillations in Reflection High Energy Electron Diffraction (RHEED) patterns, have by now been seen on various semiconductor surfaces. Although monolayer growth has been observed for (001) surfaces of Si and Ge, bilayer growth might be expected for (111) surfaces in order to minimize the number of dangling bonds on the growing surface. We demonstrate that for Ge(111) RHEED measurements point to single layer growth at low temperatures, going over into bilayer growth at higher temperatures.

引用

页码：65 / 66

页数：2