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PHONON INSTABILITIES IN ELECTRONICALLY EXCITED SEMICONDUCTORS

被引：3
作者：
AMBEGAOKAR, V
BISWAS, R
机构：
来源：
PHYSICAL REVIEW LETTERS | 1983年 / 50卷 / 04期
关键词：
D O I：
10.1103/PhysRevLett.50.285
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：285 / 285
页数：1
相关论文
共 4 条
[1]   PHONON-SPECTRUM OF A MODEL OF ELECTRONICALLY EXCITED SILICON [J].
BISWAS, R ;
AMBEGAOKAR, V .
PHYSICAL REVIEW B, 1982, 26 (04) :1980-1988
[2]   INSTABILITY OF THE ELECTRON-HOLE PLASMA IN SILICON [J].
COMBESCOT, M ;
BOK, J .
PHYSICAL REVIEW LETTERS, 1982, 48 (20) :1413-1416
[3]   EFFECT OF ELECTRON-HOLE PAIRS ON PHONON FREQUENCIES IN SI RELATED TO TEMPERATURE-DEPENDENCE OF BAND-GAPS [J].
HEINE, V ;
VANVECHTEN, JA .
PHYSICAL REVIEW B, 1976, 13 (04) :1622-1626
[4]   MELTING AND POLYMORPHISM AT HIGH PRESSURES IN SOME GROUP IV ELEMENTS AND III-V COMPOUNDS WITH DIAMOND/ZINCBLENDE STRUCTURE [J].
JAYARAMAN, A ;
KLEMENT, W ;
KENNEDY, GC .
PHYSICAL REVIEW, 1963, 130 (02) :540-&
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