SIMULATING ELECTRON FLOW IN THE APPLIED-B DIODE

被引：11

作者：

KRALL, NA ^{[1
]}

ROSENTHAL, SE ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.349410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron flow in and into an applied-B ion diode is calculated, including the effects of turbulence produced by streaming instabilities. A technique is developed for including these effects in a numerical simulation. The results of two-dimensional simulations using this technique in the electromagnetic particle-in-cell code MAGIC are presented.

引用

页码：2542 / 2551

页数：10

共 23 条

[1]

Birdsall C. K., 1997, Journal of Computational Physics, V135, P141, DOI [10.1016/0021-9991(69)90058-8, 10.1006/jcph.1997.5723]

[2] ELECTROMAGNETIC STABILITY OF HIGH-POWER ION DIODES [J].