POTENTIOMETRY COMBINED WITH ATOMIC-FORCE MICROSCOPE

被引：8

作者：

UCHIHASHI, T

FUKANO, Y

SUGAWARA, Y

MORITA, S

NAKANO, A

IDA, T

OKADA, T

机构：

[1] SHARP CO LTD, VLSI DEV LABS, IC GRP, TENRI, NARA 632, JAPAN

[2] OLYMPUS OPT CO LTD, RES DEPT, HACHIOJI, TOKYO 192, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 11A期

关键词：

POTENTIOMETRY; IMPLANTATION; DOPANT PROFILE; AFM/SCP; ATOMIC FORCE MICROSCOPE; AFM; SCANNING CONTACT POTENTIOMETRY; SCP;

D O I：

10.1143/JJAP.33.L1562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have presented a novel method for surface potential measurement based on an atomic force microscope operating under the contact mode. This method is precise and exhibits sub-mV accuracy for potential measurement as well as nanometer-order spatial resolution. We show, for the first time, simultaneous measurements of the surface potential and surface actual topography on an ion-implanted silicon substrate with inhomogeneity of surface conductance.

引用

页码：L1562 / L1564

页数：3

共 13 条

[11] EXTREMELY LOW-NOISE POTENTIOMETRY WITH A SCANNING TUNNELING MICROSCOPE [J].