AMORPHOUS-SILICON DEVICE SIMULATION BY AN ADAPTED GUMMEL METHOD

被引：5

作者：

KEMP, M ^{[1
]}

TANNOUS, CG ^{[1
]}

MEUNIER, M ^{[1
]}

机构：

[1] ECOLE POLYTECH,COUCHES MINCES GRP,MONTREAL H3C 3A7,QUEBEC,CANADA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 09期

关键词：

D O I：

10.1109/16.2584

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1510 / 1513

页数：4

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[2] A PROOF OF CONVERGENCE OF GUMMEL ALGORITHM FOR REALISTIC DEVICE GEOMETRIES
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[4] NONEQUILIBRIUM STEADY-STATE STATISTICS AND ASSOCIATED EFFECTS FOR INSULATORS AND SEMICONDUCTORS CONTAINING AN ARBITRATY DISTRIBUTION OF TRAPS
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[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02): : 502 - &
[5] AMORPHOUS-SILICON STATIC INDUCTION TRANSISTOR
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