AB-INITIO STUDY OF THE GAP OPENING WITHIN THE GRAPHITE INTO DIAMOND TOPOLOGICAL TRANSFORMATION

被引:13
作者
SANDRE, E
JULIEN, JP
CYROTLACKMANN, F
机构
[1] LEPES-CNRS, F-38042 Grenoble Cedex 9
关键词
SEMICONDUCTORS; AB INITIO CALCULATIONS; ELECTRONIC STRUCTURE;
D O I
10.1016/0022-3697(94)90208-9
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In order to study the different types of interaction corresponding to either sp(2) or sp(3) carbon atoms, we investigate the changes in hybridization while continuously transforming rhombohedral graphite into cubic diamond. Using first-principles LMTO-ASA calculations, two different domains corresponding to semiconducting and semi-metallic phases are observed. A first-neighbour two-centre tight-binding Hamiltonian helped us to relate the opening of a band gap at the Fermi level to a competition between sigma and pi interactions. The influence of the sp coupling on the band-gap opening mechanisms is considered within the perturbation theory.
引用
收藏
页码:1261 / 1268
页数:8
相关论文
共 13 条
[11]   SIMPLIFIED LCAO METHOD FOR THE PERIODIC POTENTIAL PROBLEM [J].
SLATER, JC ;
KOSTER, GF .
PHYSICAL REVIEW, 1954, 94 (06) :1498-1524
[12]  
VONBARTH U, 1965, J PHYS C SOLID STATE, V5, P1629
[13]   ELECTRONIC PROPERTIES OF AN AMORPHOUS SOLID .1. SIMPLE TIGHT-BINDING THEORY [J].
WEAIRE, D ;
THORPE, MF .
PHYSICAL REVIEW B, 1971, 4 (08) :2508-&