ENERGY RELAXATION OF ELECTRONS IN (100) N-CHANNEL OF A SI-MOSFET .2. SURFACE PHONON TREATMENT

被引：17

作者：

KROWNE, CM ^{[1
]}

HOLMKENN.JW ^{[1
]}

机构：

[1] UNIV CALIF,ELECT SCI & ENGN DEPT,LOS ANGELES,CA 90024

来源：

SURFACE SCIENCE | 1974年 / 46卷 / 01期

关键词：

D O I：

10.1016/0039-6028(74)90250-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：232 / 250

页数：19

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