DIELECTRIC-BREAKDOWN IN HIGH-EPSILON FILMS FOR ULSI DRAMS .3. LEAKAGE CURRENT PRECURSORS AND ELECTRODES

被引:49
作者
SCOTT, JF
机构
[1] Faculty of Applied Science, Royal Melbourne Institute of Technology, Melbourne
关键词
BREAKDOWN; LEAKAGE CURRENT; PZT; BST;
D O I
10.1080/10584589508012900
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A somewhat qualitative review of leakage currents J(V,t) in perovskite oxides is presented. It is stressed that space-charge-limited currents (SCLCs) are not alternatives to ionic conduction, Schottky emission, Poole-Frenkel, or Fowler-Nordheim tunneling, but can occur whenever currents due to any of those mechanisms reach a certain threshold and are no longer limited by the details of the metal electrode-ferroelectric interface. Standard metal-semiconductor band models that exclude surface states fail qualitatively to account for the experimental dependences of leakage currents and breakdown voltages on electrode work function; the correct model is metal-n-p-n-metal, with surface donor-state trapping. A discussion of conduction properties in these materials is presented from an ionic conductor viewpoint.
引用
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页码:1 / 12
页数:12
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