INFLUENCE OF SURFACE-DIFFUSION ON TOPOGRAPHY DEVELOPMENT OF AN AMORPHOUS SOLID DURING SPUTTERING

被引：37

作者：

CARTER, G ^{[1
]}

机构：

[1] UNIV SALFORD,DEPT ELECT ENGN,SALFORD M5 4WT,LANCASHIRE,ENGLAND

来源：

JOURNAL OF MATERIALS SCIENCE | 1976年 / 11卷 / 06期

关键词：

D O I：

10.1007/BF02396643

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1091 / 1098

页数：8

共 25 条

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[3] BOLTAKS BI, 1963, DIFFUSION IN SEMICON
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[5] RUTHERFORD SCATTERING STUDY OF DIFFUSION OF HEAVY-METAL IMPURITIES IN SILICON TO ION-DAMAGED SURFACE-LAYERS
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[6] EQUILIBRIUM TOPOGRAPHY OF SPUTTERED AMORPHOUS SOLIDS .2.
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[J]. JOURNAL OF MATERIALS SCIENCE, 1971, 6 (02) : 115 - &
[7] GROWTH OF TOPOGRAPHY DURING SPUTTERING OF AMORPHOUS SOLIDS .4. GENERALIZED THEORY
CARTER, G
COLLIGON, JS
NOBES, MJ
[J]. JOURNAL OF MATERIALS SCIENCE, 1973, 8 (10) : 1473 - 1481
[8] Carter G., 1968, ION BOMBARDMENT SOLI
[9] EQUILIBRIUM TOPOGRAPHY OF SPUTTERED AMORPHOUS SOLIDS .3. COMPUTER SIMULATION
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[J]. JOURNAL OF MATERIALS SCIENCE, 1972, 7 (04) : 467 - &
[10] EVOLUTION OF WELL-DEFINED SURFACE CONTOUR SUBMITTED TO ION-BOMBARDMENT - COMPUTER-SIMULATION AND EXPERIMENTAL INVESTIGATION
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[J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (01) : 52 - 62

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