THE FABRICATION OF SINGLE HETEROJUNCTION ALGAAS INGAP ELECTROLUMINESCENT DIODES

被引：14

作者：

SU, YK ^{[1
]}

WU, MC ^{[1
]}

CHANG, CY ^{[1
]}

CHENG, KY ^{[1
]}

机构：

[1] NATL CHENG KUNG UNIV,SEMICOND & SYST LABS,TAINAN,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.339467

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2541 / 2544

页数：4

共 12 条

[1]

BENEKING H, 1975, I PHYS C SER, V24, P113

[2]

CASEY HC, 1978, HETEROSTRUCTURE LA B, pCH6

[3] GROWTH OF IN(1-X) GAXP P-N JUNCTIONS BY LIQUID PHASE EPITAXY [J].

HAKKI, BW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) :1469-&

[4] BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN IN1-XGAXP ALLOYS [J].

LORENZ, MR ;

REUTER, W ;

DUMKE, WP ;

CHICOTKA, RJ ;

PETTIT, GD ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1968, 13 (12) :421-&

[5]

MCVITTIE JP, 1972, 2KSG821 STANF EL LAB

[6] DOPING AND ELECTRICAL-PROPERTIES OF MG IN LPE A1XGA1-XAS [J].

MUKAI, S ;

MAKITA, Y ;

GONDA, S .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1304-1307

[7] ELECTRONIC STRUCTURE AND LUMINESCENCE PROCESSES IN IN1-XGAXP ALLOYS [J].

ONTON, A ;

LORENZ, MR ;

REUTER, W .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3420-&

[8] ELECTRICAL AND OPTICAL-PROPERTIES OF HIGH-PURITY IN0.5GA0.5P GROWN ON GAAS BY LIQUID-PHASE EPITAXY [J].

SU, YK ;

WU, MC ;

CHANG, CY ;

CHENG, KY .

JOURNAL OF CRYSTAL GROWTH, 1986, 76 (02) :299-304

[9] TELLURIUM AND ZINC DOPING IN IN0.5GA0.5P GROWN BY LIQUID-PHASE EPITAXY [J].

WU, MC ;

SU, YK ;

CHANG, CY ;

CHENG, KY .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) :4317-4321

[10] LIQUID-PHASE-EPITAXIAL GROWTH OF INO.49GA0.51 P ON (100) GAAS BY A SUPERCOOLING METHOD [J].

WU, MC ;

SU, YK ;

CHENG, KY ;

CHANG, CY .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) :1537-1541

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