HIGH-PERFORMANCE OF FE-INP INGAAS METAL-SEMICONDUCTOR METAL PHOTODETECTORS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：37

作者：

YANG, L ^{[1
]}

SUDBO, AS ^{[1
]}

LOGAN, RA ^{[1
]}

TANBUNEK, T ^{[1
]}

TSANG, WT ^{[1
]}

机构：

[1] NORWEGIAN TELECOMMUN ADM,DEPT RES,KJELLER,NORWAY

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 01期

关键词：

D O I：

10.1109/68.47042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InGaAs metal/semiconductor/metal (MSM) photodetector with Fe-doped InP Schottky barrier enhancement layer is described. With S V bias the detector has negligible low-frequency gain, a low dark current of 200 nA, a responsivity of 0.3 AAV, and an impulse response with a 1/e fall time of 65 ps, corresponding to a 3 dB bandwidth of 2.5 GHz. The device layer structure is a very attractive candidate for integration with high-performance InGaAs/InP FET's. © 1990 IEEE

引用

页码：56 / 58

页数：3