TIME-DEPENDENT DIELECTRIC-BREAKDOWN EVALUATION FOR RAPID-THERMALLY GROWN SIO2-FILMS FORMED ON SUBMICRON-GROOVED SI SURFACES

被引：3

作者：

ARAKAWA, T

FUKUDA, H

OKABE, Y

OHNO, S

机构：

[1] Semiconductor Technology Lab., Oki Electric Industry Co., Ltd., Hachioji, Tokyo, 193, 550-5, Higashiasakawa

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 103卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90224-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

MOS capacitors formed on submicron-grooved (100)Si surfaces have been studied by time-dependent dielectric breakdown tests and transmission electron microscopy. Their time to breakdown depends on the number and profile of groove corners. Rounding off the convex upper corners of Si grooves by rapid thermal processing and rounding off the concave bottom corners by reactive ion etching successfully suppress electric field localization at groove corners and improve the reliability of MOS capacitors formed on grooves. © 1990.

引用

页码：443 / 447

页数：5

共 21 条

[1]

BIWA T, 1987, 19TH C SOL STAT DEV, P315

[2]

COTTRELL P, 1988, 1988 INT EL DEV M, P584

[3]

IMAI K, 1986, 18TH C SOL STAT DEV, P303

[4] A VISCOUS-FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH-DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURES [J].

IRENE, EA ;

TIERNEY, E ;

ANGILELLO, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2594-2597

[5]

KAO DB, 1985, 1985 INT EL DEV M, P388

[6]

LEE J, 1988, P INT RELIABILITY PH, P131

[7]

LU N, 1988, 1988 IEDM, P588

[8] THE OXIDATION OF SHAPED SILICON SURFACES [J].

MARCUS, RB ;

SHENG, TT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) :1278-1282

[9]

MOAZZAMI R, 1989 S VLSI TECHN, P77

[10]

MORITA Y, 1987, 19TH C SOL STAT DEV, P311

← 1 2 3 →