DOUBLE ZINC DIFFUSION FRONTS IN INP - THEORY AND EXPERIMENT

被引：64

作者：

YAMADA, M

TIEN, PK

MARTIN, RJ

NAHORY, RE

BALLMAN, AA

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 06期

关键词：

D O I：

10.1063/1.94436

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：594 / 596

页数：3

共 8 条

[1] LOW-TEMPERATURE ZN-DIFFUSION AND CD-DIFFUSION PROFILES IN INP AND FORMATION OF GUARD RING IN INP AVALANCHE PHOTO-DIODES [J].

ANDO, H ;

SUSA, N ;

KANBE, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1408-1413

[2] DIFFUSION AND SOLUBILITY OF ZINC IN INDIUM PHOSPHIDE [J].

CHANG, LL ;

CASEY, HC .

SOLID-STATE ELECTRONICS, 1964, 7 (06) :481-&

[3] FORMATION OF P+-P--N- JUNCTIONS IN INP BY CD DIFFUSION [J].

CHIN, AK ;

DUTT, BV ;

TEMKIN, H ;

BONNER, WA ;

ROCCASECCA, DD .

APPLIED PHYSICS LETTERS, 1980, 36 (11) :924-926

[4]

Crank J, 1975, WSEAS T SYST CONTROL

[5] ELECTRICAL-PROPERTIES OF ZINC DIFFUSED INDIUM-PHOSPHIDE [J].

HOOPER, A ;

TUCK, B .

SOLID-STATE ELECTRONICS, 1976, 19 (06) :513-517

[6]

MILLER BI, 1979, 21ST EMC

[7]

TIEN PK, 1979, APPL PHYS LETT, V34, P701, DOI 10.1063/1.90611

[8] DIFFUSION PROFILES OF ZINC IN INDIUM-PHOSPHIDE [J].

TUCK, B ;

HOOPER, A .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (15) :1806-1821

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