DOUBLE INJECTION NEGATIVE-RESISTANCE IN MAGNETIC-FIELD

被引：2

作者：

DOLOCAN, V ^{[1
]}

机构：

[1] UNIV BUCHAREST,FAC PHYS,BUCHAREST,ROMANIA

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 03期

关键词：

D O I：

10.1016/0038-1101(75)90054-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：227 / 234

页数：8

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[9] EFFECTS OF A MAGNETIC FIELD ON DOUBLE-INJECTION NEGATIVE RESISTANCE IN LONG P+-PI-N+ STRUCTURES [J].

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