1.55 MU-M MULTISECTION RIDGE LASERS

被引：5

作者：

BOWERS, JE

COLDREN, LA

HEMENWAY, BR

MILLER, BI

MARTIN, RJ

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 14期

关键词：

D O I：

10.1049/el:19830356

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：523 / 525

页数：3

共 9 条

[1] ROOM-TEMPERATURE CW OPERATION OF 1.60 MU-M GAINASP INP BURIED-HETEROSTRUCTURE INTEGRATED LASER WITH BUTT JOINTED BUILT IN DISTRIBUTED BRAGG REFLECTION WAVEGUIDE [J].

ABE, Y ;

KISHINO, K ;

TANBUNEK, T ;

ARAI, S ;

KOYAMA, F ;

MATSUMOTO, K ;

WATANABE, T ;

SUEMATSU, Y .

ELECTRONICS LETTERS, 1982, 18 (10) :410-411

[2]

COLDREN LA, 1983, J QUANTUM ELECTRON, V19

[3] SINGLE-MODE OPERATION OF COUPLED-CAVITY GAINASP-INP SEMICONDUCTOR-LASERS [J].

EBELING, KJ ;

COLDREN, LA ;

MILLER, BI ;

RENTSCHLER, JA .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :6-8

[4]

EBELING KJ, 1983, J APPL PHYS

[5] SINGLE-MODE CW RIDGE-WAVEGUIDE LASER EMITTING AT 1.55 MU-M [J].

KAMINOW, IP ;

NAHORY, RE ;

POLLACK, MA ;

STULZ, LW ;

DEWINTER, JC .

ELECTRONICS LETTERS, 1979, 15 (23) :763-765

[6]

LEE TP, 1982, J QUANTUM ELECTRON, V18, P1101

[7] 1.5 MU-M GAINASP INP DISTRIBUTED BRAGG REFLECTOR LASERS WITH BUILT-IN OPTICAL-WAVEGUIDE [J].

MIKAMI, O ;

SAITOH, T ;

NAKAGOME, H .

ELECTRONICS LETTERS, 1982, 18 (11) :458-460

[8]

PRESTON KR, 1981, ELECTRON LETT, V17, P932

[9] ROOM-TEMPERATURE CW OPERATION OF DISTRIBUTED-FEEDBACK BURIED-HETEROSTRUCTURE INGAASP INP LASERS EMITTING AT 1.57 MU-M [J].

UTAKA, K ;

AKIBA, S ;

SAKAI, K ;

MATSUSHIMA, Y .

ELECTRONICS LETTERS, 1981, 17 (25-2) :961-963

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