AN MEV-ION IMPLANTER FOR LARGE AREA APPLICATIONS

被引：46

作者：

HALLEN, A ^{[1
]}

INGEMARSSON, PA ^{[1
]}

HAKANSSON, P ^{[1
]}

SUNDQVIST, BUR ^{[1
]}

POSSNERT, G ^{[1
]}

机构：

[1] SVEDBERG LAB,S-75121 UPPSALA,SWEDEN

来源：

关键词：

D O I：

10.1016/0168-583X(89)90679-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：345 / 349

页数：5

共 13 条

[1] BAGLIN JEE, 1984, MATER RES SOC S P, V25, P179
[2] ION-BEAM-ENHANCED ADHESION IN THE ELECTRONIC STOPPING REGION
GRIFFITH, JE
QIU, Y
TOMBRELLO, TA
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 198 (2-3): : 607 - 609
[3] HUBLER GR, 1983, MATER RES SOC S P, V27
[4] INGEMARSSON PA, 1987, APPLICATION ION BEAM, P323
[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[6] Mayer J. W., 1970, ION IMPLANTATION SEM
[7] MENDENHALL MH, 1983, THESIS CALTECH
[8] SHORTER TURN-OFF TIMES IN INSULATED GATE TRANSISTORS BY PROTON IMPLANTATION
MOGROCAMPERO, A
LOVE, RP
CHANG, MF
DYER, RF
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) : 224 - 226
[9] PERFORMANCE OF THE NEC PRODUCTION HIGH-ENERGY IMPLANTATION SYSTEM
NORTON, GA
KLODY, GM
LOGER, RL
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 24-5 : 793 - 796
[10] RATHMELL RD, 1981, NUCL INSTRUM METH B, V6, P56