SHORTER TURN-OFF TIMES IN INSULATED GATE TRANSISTORS BY PROTON IMPLANTATION

被引：20

作者：

MOGROCAMPERO, A ^{[1
]}

LOVE, RP ^{[1
]}

CHANG, MF ^{[1
]}

DYER, RF ^{[1
]}

机构：

[1] GE,DEPT POWER ELECTR SEMICOND,SYRACUSE,NY 13201

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 05期

关键词：

D O I：

10.1109/EDL.1985.26105

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：224 / 226

页数：3

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