CROSS-OVER INSTABILITY DURING IMPURITY AVALANCHE BREAKDOWN IN SEMICONDUCTORS UNDER LONGITUDINAL MAGNETIC-FIELD

被引：14

作者：

AOKI, K

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Kobe University, Kobe, 657, Rokkodai, Nada

来源：

SOLID STATE COMMUNICATIONS | 1991年 / 77卷 / 01期

关键词：

D O I：

10.1016/0038-1098(91)90433-V

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A model has been presented for cross-over instability and chaos during impurity avalanche breakdown observed in n-GaAs under longitudinal magnetic field. The model has been based on generation-recombination process of impact-ionized carriers under the longitudinal magnetic fields. Spatially local magnetoresistance effect for a helically distorted current filament has been included as a truncated form in the energy balance equation. As a function of the magnetic field intensity, simulant J-E characteristics reproduce excellently the experimentally observed cross-over instability. Furthermore, an example of the chaotic current oscillations has been demonstrated numerically.

引用

页码：87 / 90

页数：4

共 15 条

[1] CURRENT INSTABILITY AND CHAOS INDUCED DURING LOW-TEMPERATURE AVALANCHE BREAKDOWN IN N-GAAS UNDER LONGITUDINAL MAGNETIC-FIELD [J].