TRANSMISSION ELECTRON-MICROSCOPY CONTRAST FROM STATIC ATOMIC DISPLACEMENTS IN HOMOGENEOUS RANDOM ALLOYS

被引：3

作者：

GLAS, F

机构：

[1] France Telecom, Centre National d’Etudes des Télécommunications, Laboratoire de Bagneux, Bagneux, 92225, 196 avenue Henri Ravéra

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1994年 / 69卷 / 05期

关键词：

D O I：

10.1080/09500839408241603

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate the existence of a new type of contrast in transmission electron microscopy. It appears in alloys displaying an atomic size effect and is induced by the field of static atomic displacements from the sites of the average lattice. The characteristics of this contrast. which exists even in homogeneous alloys, are investigated by dynamic image calculations upon very large simulated crystals of random ternary III-V alloys. The computed contrast behaves in the same way as the previously unexplained fine-scale contrast observer in the experimental micrographs of these alloys.

引用

页码：269 / 277

页数：9

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