EFFECT OF POINT DEFECTS ON ABSORPTION OF HIGH ENERGY ELECTRONS PASSING THROUGH CRYSTALS

被引:44
作者
HALL, CR
HIRSCH, PB
BOOKER, GR
机构
来源
PHILOSOPHICAL MAGAZINE | 1966年 / 14卷 / 131期
关键词
D O I
10.1080/14786436608244769
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:979 / &
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共 14 条
[1]   SCATTERING OF X-RAYS BY DEFECT STRUCTURES .2. AN EXTENSION OF THE THEORY [J].
COCHRAN, W ;
KARTHA, G .
ACTA CRYSTALLOGRAPHICA, 1956, 9 (10) :941-943
[2]   SCATTERING OF HIGH ENERGY ELECTRONS BY THERMAL VIBRATIONS OF CRYSTALS [J].
HALL, CR .
PHILOSOPHICAL MAGAZINE, 1965, 12 (118) :815-&
[3]   EFFECTS OF THERMAL DIFFUSE SCATTERING ON PROPAGATION OF HIGH ENERGY ELECTRONS THROUGH CRYSTALS [J].
HALL, CR ;
HIRSCH, PB .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1965, 286 (1405) :158-&
[5]   ANOMALOUS ELECTRON ABSORPTION EFFECTS IN METAL FOILS - THEORY AND COMPARISON WITH EXPERIMENT [J].
HASHIMOTO, H ;
HOWIE, A ;
WHELAN, MJ .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1962, 269 (1336) :80-&
[6]   ANOMALOUS ELECTRON ABSORPTION EFFECTS IN METAL FOILS [J].
HASHIMOTO, H .
PHILOSOPHICAL MAGAZINE, 1960, 5 (57) :967-&
[7]   DENSITOMETRIC AND ELECTRICAL INVESTIGATION OF BORON IN SILICON [J].
HORN, FH .
PHYSICAL REVIEW, 1955, 97 (06) :1521-1525
[8]  
HOWIE A, 1962, 5 P INT C EL MICR PH
[9]   An attempt to estimate the degree of precipitation hardening, with a simple model [J].
Mott, NF ;
Nabarro, FRN .
PROCEEDINGS OF THE PHYSICAL SOCIETY, 1940, 52 :86-89
[10]   DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J].
TANNENBAUM, E .
SOLID-STATE ELECTRONICS, 1961, 2 (2-3) :123-132