LOW-FREQUENCY NOISE SPECTROSCOPY

被引：106

作者：

JONES, BK

机构：

[1] School of Physics and Materials, Lancaster University

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 11期

关键词：

ELECTRICAL NOISE; DISCRETE ENERGY LEVELS; SPECTROSCOPY; DEEP LEVELS; GENERATION-RECOMBINATION NOISE;

D O I：

10.1109/16.333840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical noise in excess of thermal and shot noise is caused by imperfections in the device. Its control can improve the quality of the device and its measurement can give considerable information about the nature of the defects involved. For defects with discrete energy distributions spectroscopy can be used to identify the defect and measure its properties. Excess noise has large intensity at low frequencies and several mechanisms can be identified. The value of the technique for many systems is described. Comparison is made with other methods of studying such defects.

引用

页码：2188 / 2197

页数：10

共 80 条

[1] CORRELATION BETWEEN TRAP CHARACTERIZATION BY LOW-FREQUENCY NOISE, MUTUAL CONDUCTANCE DISPERSION, OSCILLATIONS AND DLTS IN GAAS-MESFETS [J].