GENERATION-RECOMBINATION NOISE IN P-TYPE SILICON

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2] RECOMBINATION MECHANISMS [J]. PHYSICA STATUS SOLIDI, 1968, 29 (01): : 9 - +

[3] DRIFT AND DIFFUSION OF HOT HOLES IN SILICON [J]. PHYSICS LETTERS A, 1979, 71 (5-6) : 464 - 466

[4] FLICKER NOISE OF HOT-ELECTRONS IN SILICON AT T=78-K [J]. PHYSICS LETTERS A, 1980, 78 (04) : 385 - 386

[5] THE LONGITUDINAL DIFFUSION-COEFFICIENT AND THE MOBILITY OF HOT-ELECTRONS IN SILICON [J]. SOLID-STATE ELECTRONICS, 1981, 24 (01) : 5 - 9

[6] FLICKER NOISE OF HOT HOLES IN SILICON AT 78-K [J]. PHYSICS LETTERS A, 1980, 80 (01) : 57 - 58

[7] ENERGY-LEVELS IN SILICON [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228

[8] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1409 - 1414

[9] SEMICONDUCTOR IMPURITY ANALYSIS FROM LOW-FREQUENCY NOISE SPECTRA [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (01) : 50 - &

[10] DEFECT LEVELS IN P-TYPE SILICON DOPED WITH MANGANESE [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3813 - 3818

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2] RECOMBINATION MECHANISMS [J]. PHYSICA STATUS SOLIDI, 1968, 29 (01): : 9 - +

[3] DRIFT AND DIFFUSION OF HOT HOLES IN SILICON [J]. PHYSICS LETTERS A, 1979, 71 (5-6) : 464 - 466

[4] FLICKER NOISE OF HOT-ELECTRONS IN SILICON AT T=78-K [J]. PHYSICS LETTERS A, 1980, 78 (04) : 385 - 386

[5] THE LONGITUDINAL DIFFUSION-COEFFICIENT AND THE MOBILITY OF HOT-ELECTRONS IN SILICON [J]. SOLID-STATE ELECTRONICS, 1981, 24 (01) : 5 - 9

[6] FLICKER NOISE OF HOT HOLES IN SILICON AT 78-K [J]. PHYSICS LETTERS A, 1980, 80 (01) : 57 - 58

[7] ENERGY-LEVELS IN SILICON [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228

[8] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1409 - 1414

[9] SEMICONDUCTOR IMPURITY ANALYSIS FROM LOW-FREQUENCY NOISE SPECTRA [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (01) : 50 - &

[10] DEFECT LEVELS IN P-TYPE SILICON DOPED WITH MANGANESE [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3813 - 3818