THE LONGITUDINAL DIFFUSION-COEFFICIENT AND THE MOBILITY OF HOT-ELECTRONS IN SILICON

被引：11

作者：

BOSMAN, G

ZIJLSTRA, RJJ

NAVA, F

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 01期

关键词：

D O I：

10.1016/0038-1101(81)90206-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：5 / 9

页数：5

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