DRIFT AND DIFFUSION OF HOT HOLES IN SILICON

被引：15

作者：

BOSMAN, G

ZIJLSTRA, RJJ

机构：

[1] Fysisch Laboratorium, Rijksuniversiteit Utrecht

来源：

PHYSICS LETTERS A | 1979年 / 71卷 / 5-6期

关键词：

D O I：

10.1016/0375-9601(79)90637-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The mobility and the diffusion coefficient versus electric field strength were calculated from current and noise data on Si hole injection diodes. The results were interpreted in terms of the structure of the valence band. © 1979.

引用

页码：464 / 466

页数：3

共 11 条

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